Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Vladimir V. Dirko, Kirill A. Lozovoy, Andrey P. Kokhanenko, Olzhas I. Kukenov, Alexander G. Korotaev, Alexander V. Voitsekhovskii
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2023-01-01
Schriftenreihe:	Nanomaterials
Schlagworte:	2D materials two-dimensional structures molecular beam epitaxy silicon germanium superstructure
Online-Zugang:	https://www.mdpi.com/2079-4991/13/2/231
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