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Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: B. Fang, X. Zhang, B. S. Zhang, Z. M. Zeng, J. W. Cai
Format: Artigo
Sprache:Inglês
Veröffentlicht: AIP Publishing LLC 2015-06-01
Schriftenreihe:AIP Advances
Online-Zugang:http://dx.doi.org/10.1063/1.4922297
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