Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K.
Active areas of bismuth Hall Probe sensors in the range (0.1 – 1) µm have been fabricated on Si/SiO2 with GaAs substrates at thickness of bismuth from (40, 60 and 70) nm by Electron Beam Lithography (EBL) and lift-off process. Scanning Hall probe microscopy (SHPM) technique at room temperature (300)...
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| Автор: | |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
University of Kirkuk
2018-06-01
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| Серія: | Kirkuk Journal of Science |
| Предмети: | |
| Онлайн доступ: | https://kujss.uokirkuk.edu.iq/article_145726_e8900c9ac4430f389372c3fa639a67ca.pdf |
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