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Beam Profile Characterisation of an Optoelectronic Silicon Lens-Integrated PIN-PD Emitter between 100 GHz and 1 THz

Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencie...

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Bibliografiset tiedot
Päätekijät: Jessica Smith, Mira Naftaly, Simon Nellen, Björn Globisch
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2021-01-01
Sarja:Applied Sciences
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Linkit:https://www.mdpi.com/2076-3417/11/2/465
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