Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium–gallium–zinc oxide thin-film trans...

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Detalhes bibliográficos

Principais autores:	Shangxiong Zhou, Zhiqiang Fang, Honglong Ning, Wei Cai, Zhennan Zhu, Jinglin Wei, Xubing Lu, Weijian Yuan, Rihui Yao, Junbiao Peng
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2018-05-01
coleção:	Applied Sciences
Assuntos:	thin-film transistors high dielectric constant solution process bias stability
Acesso em linha:	http://www.mdpi.com/2076-3417/8/5/806
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