Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors
A novel organic material named ‘collodion’ was suggested as a gate insulator for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To find the optimized condition of the collodion gate insulator (CGI), the following three parameters of collodion solution were controlled: (1) t...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis Group
2018-01-01
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| coleção: | Journal of Information Display |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1080/15980316.2017.1408502 |
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