Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

Abstract The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution...

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Bibliografische Detailangaben

Hauptverfasser:	Yufan Kang, Yongfeng Pei, Dong He, Hang Xu, Mingjun Ma, Jialu Yan, Changzhong Jiang, Wenqing Li, Xiangheng Xiao
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Nature Publishing Group 2024-05-01
Schriftenreihe:	Light: Science & Applications
Online-Zugang:	https://doi.org/10.1038/s41377-024-01477-3
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