1/f noise and carrier transport mechanisms in InSb p + -n junctions
The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-12-01
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| Col·lecció: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Matèries: | |
| Accés en línia: | http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html |
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