Bulk-Driven vs. Gate-Driven OTAs in Deep-Subthreshold ULV Operation: Analytical and Robustness Comparison in Self-Cascode Architectures

This work presents a comprehensive analytical and simulation-based comparison between bulk-driven (BD) and gate-driven (GD) operational transconductance amplifiers (OTAs) operating in the deep-subthreshold ultra-low-voltage regime. While BD techniques are traditionally considered unsuitable for high...

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Egile Nagusiak:	Salvatore Pennisi, Marco Privitera, Muhammad Omer Shah
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	MDPI AG 2026-06-01
Saila:	Chips
Gaiak:	bulk-driven MOS gate-driven MOS ultra-low-voltage (ULV) deep-subthreshold operational transconductance amplifier (OTA) self-cascode
Sarrera elektronikoa:	https://www.mdpi.com/2674-0729/5/2/14
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