Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr)

Herein, the electronic structure and optical properties of GaAs doped with rare-earth elements (Sc, Y, La, Ce, and Pr) were evaluated using the first-principles method. Results showed that the lattice constants and cell volume of GaAs increased after doping. Band structure calculations indicated tha...

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Autors principals:	Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2025-01-01
Col·lecció:	Crystals
Matèries:	rare-earth element GaAs electronic structure optical properties
Accés en línia:	https://www.mdpi.com/2073-4352/15/1/98
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