Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering
The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condi...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , , |
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| التنسيق: | Artigo |
| اللغة: | Inglês |
| منشور في: |
Wiley
2015-01-01
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| سلاسل: | Advances in Condensed Matter Physics |
| الوصول للمادة أونلاين: | http://dx.doi.org/10.1155/2015/918428 |
| الوسوم: |
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