Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn2+ is readily oxidized to Sn4+ in air. To a...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley-VCH
2024-04-01
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| Schriftenreihe: | Small Structures |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1002/sstr.202300393 |
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