Tunable electronic properties in stanene and two dimensional silicon-carbide heterobilayer: A first principles investigation
A novel two-dimensional heterobilayer, stanene-silicon carbide (Sn/SiC) is predicted using first principles calculations. Three representational stacking configurations are considered to study the structure and electronic properties of Sn/SiC heterobilayer in detail. All the stacking patterns of the...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
AIP Publishing LLC
2019-02-01
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| Serier: | AIP Advances |
| Online adgang: | http://dx.doi.org/10.1063/1.5066029 |
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