Theoretical Investigation of Elastic, Electronic, and Thermodynamic Properties of Half-Heusler Semiconductors ZrNiPb and ZrPdPb Under Pressure

The half-Heusler semiconductors ZrNiPb and ZrPdPb have attracted considerable attention due to their excellent thermoelectric performance, owing largely to their appropriate energy bandgap. However, the bandgap is sensitive to pressure, which may influence their thermoelectric behavior. In this stud...

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Detalhes bibliográficos

Principais autores:	Xiaorui Chen, Xin Zhang, Zhibin Shao, Jianzhi Gao, Minghu Pan
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2025-02-01
coleção:	Nanomaterials
Assuntos:	elastic properties electronic structures thermodynamic properties half-Heusler semiconductor first-principles calculations
Acesso em linha:	https://www.mdpi.com/2079-4991/15/3/241
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