Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100−x/Cu/[Co/Pt]2 heterostructures for multi-level magnetic pillar memory
We propose a new pillar type of multi-level memory with TbxCo100−x/Cu/[Co/Pt]2 heterostructures to achieve high storage density and controllable domain wall position in-memory applications. The structure consists of amorphous ferrimagnetic Tb–Co alloy films and ferromagnetic Co/Pt multilayers separa...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
AIP Publishing LLC
2021-11-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/5.0064346 |
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