Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone both in the generalized gradient approximation...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Yukhnovskii Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2021-06-01
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| Serie: | Condensed Matter Physics |
| Soggetti: | |
| Accesso online: | http://www.icmp.lviv.ua/journal/zbirnyk.106/23706/abstract.html |
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