Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates

Metal-semiconductor field-effect transistors (MESFETs) based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs) changes from 0 to 10 V, the source-drain current (Ids) increases exponentially with Vgs and the conductance shows a drastic...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Sumy State University 2011-01-01
Sarja:	Журнал нано- та електронної фізики
Aiheet:	MoSe2 MESFET Ohmic contact Schottky contact I-V analysis.
Linkit:	http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_709-713.pdf
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