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Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching

In this work we prepared a porous Silicon (PS) layer by electrochemical etching (ECE) technique using different etching parameters including current density, anodization time and Hydrofluoric (HF) acid concentration. From the structural properties, we found that the full width half maximum of the ob...

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Autors principals: Haider Amer Khalaf, Uday Muhsin Nayef
Format: Artigo
Idioma:Inglês
Publicat: Unviversity of Technology- Iraq 2015-10-01
Col·lecció:Engineering and Technology Journal
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Accés en línia:https://etj.uotechnology.edu.iq/article_116734_3af0a5c0e21e0245be2460f5fdd857f8.pdf
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