Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs
Abstract Recently, 2D materials have been intensively investigated for their novel nanoelectronic applications; among these materials, tungsten diselenide (WSe2) is attracting substantial research interest due to its high mobility, sizable bandgap, and ambipolar characteristics. However, Fermi‐level...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Wiley-VCH
2023-03-01
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| Цуврал: | Advanced Electronic Materials |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://doi.org/10.1002/aelm.202200955 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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