Modeling Resonance-Free Modulation Response in Transistor Lasers With Single and Multiple Quantum Wells in the Base
We have developed the expressions for terminal currents in transistor lasers (TLs) having a single quantum well (SQW) as well as multiple quantum wells (MQWs) of different well and barrier widths in the base by solving a continuity equation relating the bulk carrier density with the 2-D carrier dens...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2012-01-01
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| Edice: | IEEE Photonics Journal |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/6265334/ |
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