Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrati...

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Principais autores:	Hazem Deeb, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan, Kirill Lozovoy
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-07-01
Colecção:	Inorganics
Assuntos:	optoelectronics avalanche photodiode Ge/Si heterojunction avalanche multiplication photodetector optical fiber telecommunication
Acesso em linha:	https://www.mdpi.com/2304-6740/11/7/303
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