Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions

Germanium offers attractive optical properties despite being an indirect bandgap semiconductor, and new Ge-based devices are being optimized for sensing and photonics applications. In particular, considering the use of Ge as a sensor, improving its selectivity via organic grafting offers new alterna...

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Bibliografische Detailangaben

Hauptverfasser:	Alessia Arrigoni, Federico Turco, Benedetta Maria Squeo, Sonia Freddi, Monica Bollani, Tersilla Virgili, Andrea Chiappini, Laura Pasquardini, Mariacecilia Pasini
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2024-12-01
Schriftenreihe:	Chemistry Proceedings
Schlagworte:	germanium silicon SiGe functionalization grafting semiconductor
Online-Zugang:	https://www.mdpi.com/2673-4583/16/1/21
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