Bias voltage-switchable metal-insulator transition in 2D van der Waals TMDs FETs: Role of tunneling barriers

Two-dimensional transition metal dichalcogenides (2D TMDs) with metal-insulator transition (MIT) have garnered significant attention for their potential in elucidating electronic state regulation mechanisms and advancing novel electronic devices, ultra-low power switches, and memory technologies. Ge...

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Autors principals:	Shida Huo, Fanying Meng, Zhe Zhang, Yuan Xie, Xiaodong Hu, Enxiu Wu
Format:	Artigo
Idioma:	Inglês
Publicat:	Tsinghua University Press 2025-09-01
Col·lecció:	Nano Research
Matèries:	two-dimensional transition metal dichalcogenides metal-insulator transition schottky barrier charge-injection mechanisms van der waals (vdw) gaps
Accés en línia:	https://www.sciopen.com/article/10.26599/NR.2025.94907703
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