Energy of Crystal Lattice Thermal Oscillations in TlGaS2 Semiconductor Compound

This article presents the results of a study of the temperature dependences of the coefficients of thermal expansion and isothermal compressibility of the ternary compound TlGaS2. In the studied temperature range (80-400 K), no anomalies were found in the temperature dependences of these properties....

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Detalles Bibliográficos

Principais autores:	Kamala М. Guseinova, Fuad A. Mammadov, Aynure A. Hadiyeva, Vusala I. Eminova, Cahangir I. Huseynov
Formato:	Artigo
Idioma:	Inglês
Publicado:	V.N. Karazin Kharkiv National University Publishing 2024-12-01
Series:	East European Journal of Physics
Assuntos:	semiconductor thermal expansion thermal oscillation crystal lattice debye temperature young's modulus anharmonicity
Acceso en liña:	https://periodicals.karazin.ua/eejp/article/view/24604
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