Modeling of structural and energetic parameters of р-Er1-xScxNiSb semiconductor
The energy expediency of the existence of Er1-xScxNiSb substitutional solid solution up to the concentration x≈0.10 was established by modeling the variation of free energy ΔG(x) values (Helmholtz potential). At higher Sc concentrations, x> 0.10, there is stratification (spinoidal decomposition of p...
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| Principais autores: | , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Vasyl Stefanyk Carpathian National University
2021-09-01
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| Serier: | Фізика і хімія твердого тіла |
| Fag: | |
| Online adgang: | https://journals.pnu.edu.ua/index.php/pcss/article/view/4947 |
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