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Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets a...

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Principais autores: X. G. Li, Z. J. Liu, X. Y. Xie, A. G. Kang, W. N. Fu
Formato: Artigo
Idioma:Inglês
Publicado: Wiley 2016-01-01
Series:Advances in Materials Science and Engineering
Acceso en liña:http://dx.doi.org/10.1155/2016/4259846
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