Gallium arsenide p+–n–p+-structures with impoverished base area
It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination curr...
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| Hoofdauteurs: | , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Politehperiodika
2009-06-01
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| Reeks: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Onderwerpen: | |
| Online toegang: | http://www.tkea.com.ua/tkea/2009/3_2009/pdf/08.zip |
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