MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are based mainly on gallium arsenide. At the initial s...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Russo |
| Publicat: |
MIREA - Russian Technological University
2016-08-01
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| Col·lecció: | Российский технологический журнал |
| Matèries: | |
| Accés en línia: | https://www.rtj-mirea.ru/jour/article/view/30 |
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