Development of the design and manufacturing technology for Gunn diodes for EHF therapy
The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA. The diodes are fabricated from n–n+ type GaAs epitaxial structures. The n-layer thickness is 2....
保存先:
| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Politekhperiodika
2004-06-01
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| シリーズ: | Технологія та конструювання в електронній апаратурі |
| 主題: | |
| オンライン･アクセス: | https://tkea.com.ua/index.php/journal/article/view/1165 |
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