PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications
To fundamentally solve the bottleneck of Von Neumann’s computing architecture, a neuromorphic thin-film transistor (NTFT) employing Pb(Zr, Ti)O<sub>3</sub> (PZT) was investigated. The indium gallium zinc oxide (IGZO) channel back gate TFT structure was chosen to solve the diffusion of atoms t...
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| Hlavní autoři: | , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2021-01-01
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| Edice: | IEEE Access |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/9568914/ |
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