Radiation Effects of Advanced Electronic Devices and Circuits

As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radi...

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Detalhes bibliográficos
Corporate Authors: Chi, Yaqing, Cai, Li, Cai, Chang
Formato: Livro
Idioma:Inglês
Publicado em: MDPI - Multidisciplinary Digital Publishing Institute 2024
Assuntos:
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBC Engineering: general
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering
single event upset (SEU)
total ionizing dose (TID)
silicon-on-insulator (SOI)
synergistic effect
radiation-hardened by design (RHBD)
CMOS devices
single event latch-up (SEL)
single event effect (SEE)
resistor
pulsed laser
SiGe HBT
Geant4
TCAD simulation
single event transient
cryogenic temperature
carbon nanotube field effect transistor
total ionizing dose
radiation effect
trapped charge
SiGe heterojunction bipolar transistor
single event effect
charge collection
VDMOS
variability
oxide trapped charges
interface traps
CMOS image sensor
star sensor
hot pixel
single-event transient
star map recognition algorithm
spallation neutron
thermal neutron
Monte Carlo
system on chip
split-gate-enhanced VDMOSFET
planar gate VDMOSFET
total ionizing dose effect
long-term reliability
TID
radiation effects
camera resolution
single event effects
transient bright spot
single event upset
SiC MOSFET
heavy-ion irradiation
oxide reliability
TCAD
high-dose-rate transient ionizing effect
FDSOI
supply voltage
Monte-Carlo method
radiation shielding
space radiation
reliability
SOI
MOSFET
radiation
HCI
single-event effect
single-event gate rupture
leakage current
heavy ion irradiation
machine learning
soft error rate
transient pulse propagation
relay protection device
fault injection
soft error
CMOS SPAD
proton radiation
DCR
displacement damage
n/a
Acesso em linha:https://directory.doabooks.org/handle/20.500.12854/139445
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