Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

Por Li, Senlin, Bi, Jingfeng, Li, Mingyang, Yang, Meijia, Song, Minghui, Liu, Guanzhou, Xiong, Weiping, Li, Yang, Fang, Yanyan, Chen, Changqing, Lin, Guijiang, Chen, Wenjun, Wu, Chaoyu, Wang, Duxiang
Publicado no Nanoscale Res Lett (2015)