The methodology of modeling of electronic properties of bulk semiconductor compounds

Por A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko
Publicado em 2019-06-01

MoS₂ BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

Por A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko
Publicado em 2019-06-01

THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS

Por A. V. Krivosheeva, V. L. Shaposhnikov, A. Yu. Alexeev
Publicado em 2019-06-01

ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS₂

Por A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J. -L. Lazzari
Publicado em 2019-06-01

BANDS STRUCTURE OF 3D and 2D Ca₂Si

Por V. O. Bogorodz, V. L. Shaposhnikov, A. B. Filonov, B. S. Kolosnicin, D. B. Migas
Publicado em 2019-06-01

Atomic structure, fundamental electronic, optical and magnetic properties of low-dimensional structures of semiconductors

Por V. E. Borisenko, A. V. Krivosheeva, D. B. Migas, V. A. Pushkarchuk, A. B. Filonov, V. L. Shaposhnikov
Publicado em 2019-06-01