Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Por Chen Liu, Binjian Zeng, Siwei Dai, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jincheng Zhang, Min Liao, Yichun Zhou
Publicado em 2022-05-01