Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

gan Jang, Kyu-Won, Hwang, In-Tae, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Kim, Hyun-Seok
Cyhoeddwyd yn Micromachines (Basel) (2019)

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

gan Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Kim, Seung Mo, Lee, Sang Kyung, Lee, Byoung Hun, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won
Cyhoeddwyd yn Nanomaterials (Basel) (2020)

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

gan Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Lee, Jung-Hee, Bae, Youngho, Jung, Hyun-Wook, Kang, Soo Cheol, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won
Cyhoeddwyd yn Nanomaterials (Basel) (2020)