High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

af Chen, Yi-Ting, Sarangadharan, Indu, Sukesan, Revathi, Hseih, Ching-Yen, Lee, Geng-Yen, Chyi, Jen-Inn, Wang, Yu-Lin
Udgivet i Sci Rep (2018)