Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

per Cui, Peng, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Fu, Chen, Lin, Zhaojun
Publicat a Sci Rep (2018)

Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

per Cui, Peng, Lv, Yuanjie, Fu, Chen, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Lin, Zhaojun
Publicat a Sci Rep (2018)

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

per Cui, Peng, Mo, Jianghui, Fu, Chen, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Dai, Gang, Lin, Zhaojun
Publicat a Sci Rep (2018)