Lee, S., Winslow, M., Grein, C. H., Kodati, S. H., Jones, A. H., Fink, D. R., . . . Krishna, S. (2020). Engineering of impact ionization characteristics in In(0.53)Ga(0.47)As/Al(0.48)In(0.52)As superlattice avalanche photodiodes on InP substrate. Sci Rep.
シカゴスタイル引用形Lee, S., et al. "Engineering of Impact Ionization Characteristics in In(0.53)Ga(0.47)As/Al(0.48)In(0.52)As Superlattice Avalanche Photodiodes On InP Substrate." Sci Rep 2020.
MLA引用形式Lee, S., et al. "Engineering of Impact Ionization Characteristics in In(0.53)Ga(0.47)As/Al(0.48)In(0.52)As Superlattice Avalanche Photodiodes On InP Substrate." Sci Rep 2020.
警告: この引用は必ずしも正確ではありません.