Cita APA

Na, J., Kim, Y., Smet, J. H., Burghard, M., & Kern, K. (2019). Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe(2) Heterostructure. ACS Appl Mater Interfaces.

Citación estilo Chicago

Na, Junhong, Youngwook Kim, Jurgen H. Smet, Marko Burghard, y Klaus Kern. "Gate-Tunable Tunneling Transistor Based On a Thin Black Phosphorus–SnSe(2) Heterostructure." ACS Appl Mater Interfaces 2019.

Cita MLA

Na, Junhong, et al. "Gate-Tunable Tunneling Transistor Based On a Thin Black Phosphorus–SnSe(2) Heterostructure." ACS Appl Mater Interfaces 2019.