Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

ABSTRACT: Wafer-scale, conformal, two-dimensional (2D) TiO(2)-Ga(2)O(3) n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO(2) substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Xu, Hongyan, Han, Feng, Xia, Chengkai, Wang, Siyan, Ramachandran, Ranish M., Detavernier, Christophe, Wei, Minsong, Lin, Liwei, Zhuiykov, Serge
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2019
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6517468/
https://ncbi.nlm.nih.gov/pubmed/31089900
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2991-1
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