APA Citatie

Kim, M., Ha, J., Kwon, I., Han, J., Cho, S., & Cho, I. H. (2018). A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications. Micromachines (Basel).

Chicago Style citaat

Kim, Myeongsun, Jongmin Ha, Ikhyeon Kwon, Jae-Hee Han, Seongjae Cho, en Il Hwan Cho. "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications." Micromachines (Basel) 2018.

MLA citatie

Kim, Myeongsun, et al. "A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications." Micromachines (Basel) 2018.