Christian, G., Kappers, M., Massabuau, F., Humphreys, C., Oliver, R., & Dawson, P. (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials (Basel).

Christian, George, Menno Kappers, Fabien Massabuau, Colin Humphreys, Rachel Oliver, and Philip Dawson. "Effects of a Si-doped InGaN Underlayer On the Optical Properties of InGaN/GaN Quantum Well Structures With Different Numbers of Quantum Wells." Materials (Basel) 2018.

Christian, George, et al. "Effects of a Si-doped InGaN Underlayer On the Optical Properties of InGaN/GaN Quantum Well Structures With Different Numbers of Quantum Wells." Materials (Basel) 2018.