A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions

In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 µm fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge se...

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Veröffentlicht in:Sensors (Basel)
Hauptverfasser: Shrestha, Sumeet, Kawahito, Shoji, Kamehama, Hiroki, Nakanishi, Syunta, Yasutomi, Keita, Kagawa, Keiichiro, Teranishi, Nobukazu, Takeda, Ayaki, Tsuru, Takeshi Go, Kurachi, Ikuo, Arai, Yasuo
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI 2018
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Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6022047/
https://ncbi.nlm.nih.gov/pubmed/29865217
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s18061789
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