Wu, C., You, H., Lin, Y., Yang, C., Hsiao, Y., Liao, T., & Yang, W. (2018). Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique. Materials (Basel).
Citação norma ChicagoWu, Chi-Chang, Hsin-Chiang You, Yu-Hsien Lin, Chia-Jung Yang, Yu-Ping Hsiao, Tun-Po Liao, and Wen-Luh Yang. "Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique." Materials (Basel) 2018.
Citação norma MLAWu, Chi-Chang, et al. "Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique." Materials (Basel) 2018.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.