Carregant...
In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields
We introduce a method for directly imaging depletion layers in operando with elemental specificity and chemical speciation at sub–100 nm spatial resolution applicable to today’s three-dimensional electronic architectures. These typically contain complex, multicomponent designs consisting of epitaxia...
Guardat en:
Publicat a: | Sci Adv |
---|---|
Autors principals: | , , , , , |
Format: | Artigo |
Idioma: | Inglês |
Publicat: |
American Association for the Advancement of Science
2017
|
Matèries: | |
Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5722647/ https://ncbi.nlm.nih.gov/pubmed/29226247 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aao4044 |
Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|