Carregant...

In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields

We introduce a method for directly imaging depletion layers in operando with elemental specificity and chemical speciation at sub–100 nm spatial resolution applicable to today’s three-dimensional electronic architectures. These typically contain complex, multicomponent designs consisting of epitaxia...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Sci Adv
Autors principals: Johannes, Andreas, Salomon, Damien, Martinez-Criado, Gema, Glaser, Markus, Lugstein, Alois, Ronning, Carsten
Format: Artigo
Idioma:Inglês
Publicat: American Association for the Advancement of Science 2017
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5722647/
https://ncbi.nlm.nih.gov/pubmed/29226247
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aao4044
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!