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In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields
We introduce a method for directly imaging depletion layers in operando with elemental specificity and chemical speciation at sub–100 nm spatial resolution applicable to today’s three-dimensional electronic architectures. These typically contain complex, multicomponent designs consisting of epitaxia...
Enregistré dans:
| Publié dans: | Sci Adv |
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| Auteurs principaux: | , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
American Association for the Advancement of Science
2017
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5722647/ https://ncbi.nlm.nih.gov/pubmed/29226247 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aao4044 |
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