A carregar...

Customized binary and multi-level HfO(2−x)-based memristors tuned by oxidation conditions

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO(2−x), given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO(2...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: He, Weifan, Sun, Huajun, Zhou, Yaxiong, Lu, Ke, Xue, Kanhao, Miao, Xiangshui
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5577168/
https://ncbi.nlm.nih.gov/pubmed/28855562
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-09413-9
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!