Lin, Y., & Yang, Y. (2015). Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory. Materials (Basel).
Chicago Style citaatLin, Yu-Hsien, en Yi-Yun Yang. "Work Function Adjustment By Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory." Materials (Basel) 2015.
MLA citatieLin, Yu-Hsien, en Yi-Yun Yang. "Work Function Adjustment By Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory." Materials (Basel) 2015.
Let op: Deze citaties zijn niet altijd 100% accuraat.