APA Zitierstil

Wang, G., Luo, J., Qin, C., Liang, R., Xu, Y., Liu, J., . . . Ye, T. (2017). Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors. Nanoscale Res Lett.

Chicago Zitierstil

Wang, Guilei, et al. "Integration of Highly Strained SiGe in Source and Drain With HK and MG for 22 nm Bulk PMOS Transistors." Nanoscale Res Lett 2017.

MLA Zitierstil

Wang, Guilei, et al. "Integration of Highly Strained SiGe in Source and Drain With HK and MG for 22 nm Bulk PMOS Transistors." Nanoscale Res Lett 2017.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.