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Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the ma...
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| Опубликовано в: : | Sci Rep |
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| Главные авторы: | , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2016
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5064367/ https://ncbi.nlm.nih.gov/pubmed/27739442 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35036 |
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